| PART |
Description |
Maker |
| ZXMHC6A07N8 ZXMHC6A07N8TC |
60V SO8 Complementary enhancement mode MOSFET H-Bridge
|
Diodes Incorporated
|
| NTMD4N03R2 |
Power MOSFET 4 Amps, 30 Volts, N-Channel SO8 Dual
|
ON Semiconductor
|
| ZXMN6A25DN8_06 ZXMN6A25DN8 ZXMN6A25DN8TA ZXMN6A25D |
Dual 60V SO8 N-channel enhancement mode MOSFET
|
ZETEX[Zetex Semiconductors]
|
| ZXMN3G32DN8TA ZXMN3G32DN8 |
30V SO8 dual N-channel enhancement mode MOSFET
|
Diodes Incorporated
Zetex Semiconductors
|
| FDS3992_04 FDS3992 FDS3992NL FDS399204 |
Dual N-Channel PowerTrench? MOSFET 100V, 4.5A, 62m?/a>
Dual N-Channel PowerTrench㈢ MOSFET 100V, 4.5A, 62mз
Discrete Commercial N-Channel PowerTrench MOSFET, 100V, 4.5A, 0.062 Ohms @ VGS = 10V, SO-8 Package
|
FAIRCHILD[Fairchild Semiconductor]
|
| ZXMHC10A07T8-15 |
COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE
|
Diodes Incorporated
|
| BSO604NS2 |
Low Voltage MOSFETs - Dual-SO8; 5 A; 55V; LL; 35 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| MMDF2C03HD ON2158 MMDF2C03HD-D |
Complementary TMOS Field Effect Transistors
COMPLEMENTARY DUAL TMOS POWER FET 2.0 AMPERES 30 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MJD112-001 MJD112RL MJD112T4 MJD112T4G MJD117 MJD1 |
Power 2A 100V Darlington NPN
Power 2A 100V Darlington PNP
Complementary Darlington Power Transistors
|
ONSEMI[ON Semiconductor]
|
| BYW51-200 |
8A, 100V - 200V Ultrafast Dual Diodes(8A, 100V - 200V 超快速二极管) 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
|
ON Semiconductor
|
| 935163290112 PCF1252-0T/F4112 PCF1252-0TD-T PCF125 |
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8
Threshold detector and reset generator; Package: SOT96-1 (SO8); Container: Tube
Threshold detector and reset generator; Package: SOT96-1 (SO8); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| HCPL0530R2V |
SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 1kV/us; Package: SOIC-W; No of Pins: 8; Container: Tape & Reel 2 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 1 Mbps
|
Fairchild Semiconductor, Corp.
|
